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TP65H070LSG
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TP65H070LSG

Manufacturer: Transphorm In Stock 290 pcs

Datasheet: TP65H070LSG
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: 650 V 25 A GAN FET $11.8
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Product Parameter

Series
TP65H070L
FET Type
N-Channel
Vgs (Max)
±20V
Technology
GaNFET (Gallium Nitride)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
3-PowerDFN
Vgs(th) (Max) @ Id
4.8V @ 700µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Power Dissipation (Max)
96W (Tc)
Supplier Device Package
3-PQFN (8x8)
Gate Charge (Qg) (Max) @ Vgs
9.3nC @ 10V
Drain to Source Voltage (Vdss)
650V
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 400V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V