TP65H050WS
Manufacturer: | Transphorm |
In Stock 393 pcs
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Datasheet: | TP65H050WS | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | GANFET N-CH 650V 34A TO247-3 | $15.5 |
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Product Parameter
- Series
- -
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- GaNFET (Gallium Nitride)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4.8V @ 700µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 22A, 10V
- Power Dissipation (Max)
- 119W (Tc)
- Supplier Device Package
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Input Capacitance (Ciss) (Max) @ Vds
- 1000pF @ 400V
- Current - Continuous Drain (Id) @ 25°C
- 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 12V