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TP65H035WS
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TP65H035WS

Manufacturer: Transphorm In Stock 821 pcs

Datasheet: TP65H035WS
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: GANFET N-CH 650V 46.5A TO247-3 $18.59
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Product Parameter

Series
-
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
GaNFET (Gallium Nitride)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4.8V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Power Dissipation (Max)
156W (Tc)
Supplier Device Package
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Drain to Source Voltage (Vdss)
650V
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 400V
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V