TP65H070LDG
Manufacturer: | Transphorm |
In Stock 235 pcs
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Datasheet: | TP65H070LDG | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | 650 V 25 A GAN FET | $11.8 |
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Product Parameter
- Series
- TP65H070L
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- GaNFET (Gallium Nitride)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 3-PowerDFN
- Vgs(th) (Max) @ Id
- 4.8V @ 700µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 85mOhm @ 16A, 10V
- Power Dissipation (Max)
- 96W (Tc)
- Supplier Device Package
- 3-PQFN (8x8)
- Gate Charge (Qg) (Max) @ Vgs
- 9.3nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Input Capacitance (Ciss) (Max) @ Vds
- 600pF @ 400V
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V