STI11NM60ND
Manufacturer: | STMicroelectronics |
In Stock 2949 pcs
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Datasheet: | STI11NM60ND | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 600V 10A I2PAK | Inquiry |
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Product Parameter
- Series
- FDmesh™ II
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±25V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number
- STI11N
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 450mOhm @ 5A, 10V
- Power Dissipation (Max)
- 90W (Tc)
- Supplier Device Package
- I2PAK
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 10V
- Drain to Source Voltage (Vdss)
- 600V
- Input Capacitance (Ciss) (Max) @ Vds
- 850pF @ 50V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V