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STI11NM60ND
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STI11NM60ND

Manufacturer: STMicroelectronics In Stock 2949 pcs

Datasheet: STI11NM60ND
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 600V 10A I2PAK Inquiry
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Product Parameter

Series
FDmesh™ II
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number
STI11N
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
450mOhm @ 5A, 10V
Power Dissipation (Max)
90W (Tc)
Supplier Device Package
I2PAK
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Drain to Source Voltage (Vdss)
600V
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 50V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V