STI10NM60N
Manufacturer: | STMicroelectronics |
In Stock 2680 pcs
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Datasheet: | STI10NM60N | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 600V 10A I2PAK | $2.31 |
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Product Parameter
- Series
- MDmesh™ II
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±25V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number
- STI10N
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 550mOhm @ 4A, 10V
- Power Dissipation (Max)
- 70W (Tc)
- Supplier Device Package
- I2PAK (TO-262)
- Gate Charge (Qg) (Max) @ Vgs
- 19nC @ 10V
- Drain to Source Voltage (Vdss)
- 600V
- Input Capacitance (Ciss) (Max) @ Vds
- 540pF @ 50V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V