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SIR802DP-T1-GE3
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SIR802DP-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 36 pcs

Datasheet: SIR802DP-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 20V 30A PPAK SO-8 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Vgs(th) (Max) @ Id
1.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
5mOhm @ 10A, 10V
Power Dissipation (Max)
4.6W (Ta), 27.7W (Tc)
Supplier Device Package
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
1785pF @ 10V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V