SIR802DP-T1-GE3
Manufacturer: | Vishay / Siliconix |
In Stock 36 pcs
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Datasheet: | SIR802DP-T1-GE3 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 20V 30A PPAK SO-8 | Inquiry |
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Product Parameter
- Series
- TrenchFET®
- FET Type
- N-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- ±12V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5mOhm @ 10A, 10V
- Power Dissipation (Max)
- 4.6W (Ta), 27.7W (Tc)
- Supplier Device Package
- PowerPAK® SO-8
- Gate Charge (Qg) (Max) @ Vgs
- 32nC @ 10V
- Drain to Source Voltage (Vdss)
- 20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1785pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V