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SI8900EDB-T2-E1
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SI8900EDB-T2-E1

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SI8900EDB-T2-E1
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: MOSFET 2N-CH 20V 5.4A 10-MFP $1.46
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Product Parameter

Series
TrenchFET®
FET Type
2 N-Channel (Dual) Common Drain
Packaging
Tape & Reel (TR)
FET Feature
Logic Level Gate
Part Status
Active
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
10-UFBGA, CSPBGA
Base Part Number
SI8900
Vgs(th) (Max) @ Id
1V @ 1.1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
-
Supplier Device Package
10-Micro Foot™ CSP (2x5)
Gate Charge (Qg) (Max) @ Vgs
-
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
Current - Continuous Drain (Id) @ 25°C
5.4A