SI4900DY-T1-GE3
Manufacturer: | Vishay / Siliconix |
In Stock 2907 pcs
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Datasheet: | SI4900DY-T1-GE3 | ||
Product Category: | Transistors - FETs, MOSFETs - Arrays | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET 2N-CH 60V 5.3A 8-SOIC | Inquiry |
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Product Parameter
- Series
- TrenchFET®
- FET Type
- 2 N-Channel (Dual)
- Packaging
- Digi-Reel®
- FET Feature
- Logic Level Gate
- Part Status
- Active
- Power - Max
- 3.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- SI4900
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 58mOhm @ 4.3A, 10V
- Supplier Device Package
- 8-SO
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Drain to Source Voltage (Vdss)
- 60V
- Input Capacitance (Ciss) (Max) @ Vds
- 665pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 5.3A