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SI4900DY-T1-GE3
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SI4900DY-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 2907 pcs

Datasheet: SI4900DY-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
2 N-Channel (Dual)
Packaging
Digi-Reel®
FET Feature
Logic Level Gate
Part Status
Active
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Part Number
SI4900
Vgs(th) (Max) @ Id
3V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
58mOhm @ 4.3A, 10V
Supplier Device Package
8-SO
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
665pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.3A