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SI3812DV-T1-GE3
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SI3812DV-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SI3812DV-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 20V 2A 6-TSOP Inquiry
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Product Parameter

Series
LITTLE FOOT®
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
FET Feature
Schottky Diode (Isolated)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
125mOhm @ 2.4A, 4.5V
Power Dissipation (Max)
830mW (Ta)
Supplier Device Package
6-TSOP
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V