TPD3215M
Manufacturer: | Transphorm |
In Stock 67 pcs
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Datasheet: | TPD3215M | ||
Product Category: | Transistors - FETs, MOSFETs - Arrays | Reference Price (In US Dollars) | 1pcs |
Description: | GANFET 2N-CH 600V 70A MODULE | $178.83 |
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Product Parameter
- Series
- -
- FET Type
- 2 N-Channel (Half Bridge)
- Packaging
- Bulk
- FET Feature
- GaNFET (Gallium Nitride)
- Part Status
- Obsolete
- Power - Max
- 470W
- Mounting Type
- Through Hole
- Package / Case
- Module
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 34mOhm @ 30A, 8V
- Supplier Device Package
- Module
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 8V
- Drain to Source Voltage (Vdss)
- 600V
- Input Capacitance (Ciss) (Max) @ Vds
- 2260pF @ 100V
- Current - Continuous Drain (Id) @ 25°C
- 70A (Tc)