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TPD3215M
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TPD3215M

Manufacturer: Transphorm In Stock 67 pcs

Datasheet: TPD3215M
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: GANFET 2N-CH 600V 70A MODULE $178.83
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Product Parameter

Series
-
FET Type
2 N-Channel (Half Bridge)
Packaging
Bulk
FET Feature
GaNFET (Gallium Nitride)
Part Status
Obsolete
Power - Max
470W
Mounting Type
Through Hole
Package / Case
Module
Vgs(th) (Max) @ Id
-
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 8V
Supplier Device Package
Module
Gate Charge (Qg) (Max) @ Vgs
28nC @ 8V
Drain to Source Voltage (Vdss)
600V
Input Capacitance (Ciss) (Max) @ Vds
2260pF @ 100V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)