TK160F10N1L,LQ
Manufacturer: | Toshiba Semiconductor and Storage |
In Stock 0 pcs
|
|
---|---|---|---|
Datasheet: | TK160F10N1L,LQ | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | X35 PB-F POWER MOSFET TRANSISTOR | $1.34 |
Fill out the below form and we will contact you as soon as possible.
Product Parameter
- Series
- U-MOSVIII-H
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA
- Operating Temperature
- 175°C
- Rds On (Max) @ Id, Vgs
- 2.4mOhm @ 80A, 10V
- Power Dissipation (Max)
- 375W (Tc)
- Supplier Device Package
- TO-220SM(W)
- Gate Charge (Qg) (Max) @ Vgs
- 122nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Input Capacitance (Ciss) (Max) @ Vds
- 10100pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 160A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V