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TK160F10N1L,LQ

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: TK160F10N1L,LQ
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: X35 PB-F POWER MOSFET TRANSISTOR $1.34
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Product Parameter

Series
U-MOSVIII-H
FET Type
N-Channel
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
3.5V @ 1mA
Operating Temperature
175°C
Rds On (Max) @ Id, Vgs
2.4mOhm @ 80A, 10V
Power Dissipation (Max)
375W (Tc)
Supplier Device Package
TO-220SM(W)
Gate Charge (Qg) (Max) @ Vgs
122nC @ 10V
Drain to Source Voltage (Vdss)
100V
Input Capacitance (Ciss) (Max) @ Vds
10100pF @ 10V
Current - Continuous Drain (Id) @ 25°C
160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V