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EMB10T2R
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EMB10T2R

Manufacturer: ROHM Semiconductor In Stock 0 pcs

Datasheet: EMB10T2R
Product Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS 2PNP PREBIAS 0.15W EMT6 $0.1
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Product Parameter

Series
-
Packaging
Tape & Reel (TR)
Part Status
Active
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Transistor Type
2 PNP - Pre-Biased (Dual)
Base Part Number
MB10
Resistor - Base (R1)
2.2kOhms
Frequency - Transition
250MHz
Supplier Device Package
EMT6
Resistor - Emitter Base (R2)
47kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50V