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NSVB123JPDXV6T1G
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NSVB123JPDXV6T1G

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: NSVB123JPDXV6T1G
Product Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS PREBIAS NPN/PNP SOT563 Inquiry
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Product Parameter

Series
-
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1)
2.2kOhms
Frequency - Transition
-
Supplier Device Package
SOT-563
Resistor - Emitter Base (R2)
4.7kOhms
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)
50V