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NSBA113EF3T5G
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NSBA113EF3T5G

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: NSBA113EF3T5G
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS PREBIAS DUAL PNP $0.1
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Product Parameter

Series
-
Packaging
Tape & Reel (TR)
Part Status
Active
Power - Max
254mW
Mounting Type
Surface Mount
Package / Case
SOT-1123
Transistor Type
PNP - Pre-Biased
Resistor - Base (R1)
1 kOhms
Supplier Device Package
SOT-1123
Resistor - Emitter Base (R2)
1 kOhms
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
3 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)
50V