NJVMJD112T4G
Manufacturer: | ON Semiconductor |
In Stock 0 pcs
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Datasheet: | NJVMJD112T4G | ||
Product Category: | Transistors - Bipolar (BJT) - Single | Reference Price (In US Dollars) | 1pcs |
Description: | TRANS NPN DARL 100V 2A DPAK | $0.32 |
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Product Parameter
- Series
- -
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Power - Max
- 20W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type
- NPN - Darlington
- Base Part Number
- MJD112
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Frequency - Transition
- 25MHz
- Supplier Device Package
- DPAK
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 40mA, 4A
- Current - Collector (Ic) (Max)
- 2A
- Current - Collector Cutoff (Max)
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 2A, 3V
- Voltage - Collector Emitter Breakdown (Max)
- 100V