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MJE801STU
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MJE801STU

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: MJE801STU
Product Category: Transistors - Bipolar (BJT) - Single Reference Price (In US Dollars) 1pcs
Description: TRANS NPN DARL 60V 4A TO126 Inquiry
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Product Parameter

Series
-
Packaging
Tube
Part Status
Obsolete
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Transistor Type
NPN - Darlington
Operating Temperature
150°C (TJ)
Frequency - Transition
-
Supplier Device Package
TO-126-3
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Current - Collector (Ic) (Max)
4A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A, 3V
Voltage - Collector Emitter Breakdown (Max)
60V