MJD112-1G
Manufacturer: | ON Semiconductor |
In Stock 4392 pcs
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Datasheet: | MJD112-1G | ||
Product Category: | Transistors - Bipolar (BJT) - Single | Reference Price (In US Dollars) | 1pcs |
Description: | TRANS NPN DARL 100V 2A IPAK | $0.68 |
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Product Parameter
- Series
- -
- Packaging
- Tube
- Part Status
- Active
- Power - Max
- 1.75W
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Transistor Type
- NPN - Darlington
- Base Part Number
- MJD112
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Frequency - Transition
- 25MHz
- Supplier Device Package
- I-PAK
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 40mA, 4A
- Current - Collector (Ic) (Max)
- 2A
- Current - Collector Cutoff (Max)
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 2A, 3V
- Voltage - Collector Emitter Breakdown (Max)
- 100V