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HGTD1N120BNS9A
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HGTD1N120BNS9A

Manufacturer: ON Semiconductor In Stock 5344 pcs

Datasheet: HGTD1N120BNS9A
Product Category: Transistors - IGBTs - Single Reference Price (In US Dollars) 1pcs
Description: IGBT 1200V 5.3A 60W TO252AA Inquiry
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Product Parameter

Series
-
IGBT Type
NPT
Packaging
Digi-Reel®
Input Type
Standard
Gate Charge
14nC
Part Status
Active
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Condition
960V, 1A, 82Ohm, 15V
Base Part Number
HGTD1N120
Switching Energy
70µJ (on), 90µJ (off)
Td (on/off) @ 25°C
15ns/67ns
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-252AA
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 1A
Current - Collector (Ic) (Max)
5.3A
Current - Collector Pulsed (Icm)
6A
Voltage - Collector Emitter Breakdown (Max)
1200V