PBRN113ES,126
Manufacturer: | NXP USA Inc. |
In Stock 0 pcs
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Datasheet: | PBRN113ES,126 | ||
Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased | Reference Price (In US Dollars) | 1pcs |
Description: | TRANS PREBIAS NPN 0.7W TO92-3 | Inquiry |
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Product Parameter
- Series
- -
- Packaging
- Tape & Box (TB)
- Part Status
- Obsolete
- Power - Max
- 700mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type
- NPN - Pre-Biased
- Base Part Number
- PBRN113
- Resistor - Base (R1)
- 1 kOhms
- Supplier Device Package
- TO-92-3
- Resistor - Emitter Base (R2)
- 1 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 1.15V @ 8mA, 800mA
- Current - Collector (Ic) (Max)
- 800mA
- Current - Collector Cutoff (Max)
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 300mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 40V