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APT1001R1BN

Manufacturer: Microsemi Corporation In Stock 0 pcs

Datasheet: APT1001R1BN
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 1000V 10.5A TO247AD Inquiry
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Product Parameter

Series
POWER MOS IV®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.1Ohm @ 5.25A, 10V
Power Dissipation (Max)
310W (Tc)
Supplier Device Package
TO-247AD
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Drain to Source Voltage (Vdss)
1000V
Input Capacitance (Ciss) (Max) @ Vds
2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V