APT1001R1BN
Manufacturer: | Microsemi Corporation |
In Stock 0 pcs
|
|
---|---|---|---|
Datasheet: | APT1001R1BN | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 1000V 10.5A TO247AD | Inquiry |
Fill out the below form and we will contact you as soon as possible.
Product Parameter
- Series
- POWER MOS IV®
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.1Ohm @ 5.25A, 10V
- Power Dissipation (Max)
- 310W (Tc)
- Supplier Device Package
- TO-247AD
- Gate Charge (Qg) (Max) @ Vgs
- 130nC @ 10V
- Drain to Source Voltage (Vdss)
- 1000V
- Input Capacitance (Ciss) (Max) @ Vds
- 2950pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V