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IMZ120R090M1HXKSA1

Manufacturer: Infineon Technologies In Stock 0 pcs

Datasheet: IMZ120R090M1HXKSA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: COOLSIC MOSFETS 1200V $15.8
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Product Parameter

Series
CoolSiC™
FET Type
N-Channel
Vgs (Max)
+23V, -7V
Technology
SiC (Silicon Carbide Junction Transistor)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
5.7V @ 3.7mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
117mOhm @ 8.5A, 18V
Power Dissipation (Max)
115W (Tc)
Supplier Device Package
PG-TO247-4-1
Gate Charge (Qg) (Max) @ Vgs
21nC @ 18V
Drain to Source Voltage (Vdss)
1.2kV
Input Capacitance (Ciss) (Max) @ Vds
707pF @ 800V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V