DF200R12W1H3B27BOMA1
Manufacturer: | Infineon Technologies |
In Stock 0 pcs
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Datasheet: | DF200R12W1H3B27BOMA1 | ||
Product Category: | Transistors - IGBTs - Modules | Reference Price (In US Dollars) | 1pcs |
Description: | IGBT MODULE VCES 1200V 200A | $50.67 |
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Product Parameter
- Input
- Standard
- Series
- -
- IGBT Type
- -
- Part Status
- Active
- Power - Max
- 375W
- Configuration
- 2 Independent
- Mounting Type
- Chassis Mount
- NTC Thermistor
- Yes
- Package / Case
- Module
- Operating Temperature
- -40°C ~ 150°C
- Supplier Device Package
- Module
- Vce(on) (Max) @ Vge, Ic
- 1.3V @ 15V, 30A
- Current - Collector (Ic) (Max)
- 30A
- Input Capacitance (Cies) @ Vce
- 2nF @ 25V
- Current - Collector Cutoff (Max)
- 1mA
- Voltage - Collector Emitter Breakdown (Max)
- 1200V