BSC900N20NS3GATMA1
Manufacturer: | Infineon Technologies |
In Stock 0 pcs
|
|
---|---|---|---|
Datasheet: | BSC900N20NS3GATMA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 200V 15.2A 8TDSON | $0.7 |
Fill out the below form and we will contact you as soon as possible.
Product Parameter
- Series
- OptiMOS™
- FET Type
- N-Channel
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 4V @ 30µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 90mOhm @ 7.6A, 10V
- Power Dissipation (Max)
- 62.5W (Tc)
- Supplier Device Package
- PG-TDSON-8
- Gate Charge (Qg) (Max) @ Vgs
- 11.6nC @ 10V
- Drain to Source Voltage (Vdss)
- 200V
- Input Capacitance (Ciss) (Max) @ Vds
- 920pF @ 100V
- Current - Continuous Drain (Id) @ 25°C
- 15.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V