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BSC900N20NS3GATMA1
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BSC900N20NS3GATMA1

Manufacturer: Infineon Technologies In Stock 0 pcs

Datasheet: BSC900N20NS3GATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 200V 15.2A 8TDSON $0.7
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Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
4V @ 30µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
90mOhm @ 7.6A, 10V
Power Dissipation (Max)
62.5W (Tc)
Supplier Device Package
PG-TDSON-8
Gate Charge (Qg) (Max) @ Vgs
11.6nC @ 10V
Drain to Source Voltage (Vdss)
200V
Input Capacitance (Ciss) (Max) @ Vds
920pF @ 100V
Current - Continuous Drain (Id) @ 25°C
15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V