

IXTT10N100D2
Manufacturer: | IXYS | In Stock 0 pcs | |
---|---|---|---|
Datasheet: | IXTT10N100D2 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 1000V 10A TO-267 | $10.51 |
Fill out the below form and we will contact you as soon as possible.
Product Parameter
- Series
- -
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- Depletion Mode
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.5Ohm @ 5A, 10V
- Power Dissipation (Max)
- 695W (Tc)
- Supplier Device Package
- TO-268
- Gate Charge (Qg) (Max) @ Vgs
- 200nC @ 5V
- Drain to Source Voltage (Vdss)
- 1000V
- Input Capacitance (Ciss) (Max) @ Vds
- 5320pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V