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IXFT10N100
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IXFT10N100

Manufacturer: IXYS In Stock 0 pcs

Datasheet: IXFT10N100
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 1000V 10A TO-268 $11.51
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Product Parameter

Series
HiPerFET™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ Id
4.5V @ 4mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 5A, 10V
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
TO-268
Gate Charge (Qg) (Max) @ Vgs
155nC @ 10V
Drain to Source Voltage (Vdss)
1000V
Input Capacitance (Ciss) (Max) @ Vds
4000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V