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IXFN100N10S1
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IXFN100N10S1

Manufacturer: IXYS In Stock 0 pcs

Datasheet: IXFN100N10S1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 100V 100A SOT-227B Inquiry
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Product Parameter

Series
HiPerFET™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Vgs(th) (Max) @ Id
4V @ 4mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
15mOhm @ 500mA, 10V
Power Dissipation (Max)
360W (Tc)
Supplier Device Package
SOT-227B
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Drain to Source Voltage (Vdss)
100V
Input Capacitance (Ciss) (Max) @ Vds
4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V