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IXFT6N100F
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IXFT6N100F

Manufacturer: IXYS-RF In Stock 188 pcs

Datasheet: IXFT6N100F
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 1000V 6A TO268 $9.54
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Product Parameter

Series
HiPerRF™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.9Ohm @ 3A, 10V
Power Dissipation (Max)
180W (Tc)
Supplier Device Package
TO-268 (IXFT)
Gate Charge (Qg) (Max) @ Vgs
54nC @ 10V
Drain to Source Voltage (Vdss)
1000V
Input Capacitance (Ciss) (Max) @ Vds
1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V