HTNFET-D
Manufacturer: | Honeywell Aerospace |
In Stock 0 pcs
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Datasheet: | HTNFET-D | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 55V 8-DIP | $391.5 |
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Product Parameter
- Series
- HTMOS™
- FET Type
- N-Channel
- Packaging
- Bulk
- Vgs (Max)
- 10V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- 8-CDIP Exposed Pad
- Vgs(th) (Max) @ Id
- 2.4V @ 100µA
- Operating Temperature
- -55°C ~ 225°C (TJ)
- Rds On (Max) @ Id, Vgs
- 400mOhm @ 100mA, 5V
- Power Dissipation (Max)
- 50W (Tj)
- Supplier Device Package
- 8-CDIP-EP
- Gate Charge (Qg) (Max) @ Vgs
- 4.3nC @ 5V
- Drain to Source Voltage (Vdss)
- 55V
- Input Capacitance (Ciss) (Max) @ Vds
- 290pF @ 28V
- Current - Continuous Drain (Id) @ 25°C
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 5V