

GA100JT12-227
Manufacturer: | GeneSiC Semiconductor | In Stock 0 pcs | |
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Datasheet: | GA100JT12-227 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | TRANS SJT 1200V 160A SOT227 | Inquiry |
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Product Parameter
- Series
- -
- FET Type
- -
- Packaging
- Tube
- Vgs (Max)
- -
- Technology
- SiC (Silicon Carbide Junction Transistor)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 10mOhm @ 100A
- Power Dissipation (Max)
- 535W (Tc)
- Supplier Device Package
- SOT-227
- Drain to Source Voltage (Vdss)
- 1200V
- Input Capacitance (Ciss) (Max) @ Vds
- 14400pF @ 800V
- Current - Continuous Drain (Id) @ 25°C
- 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- -