Product Parameter
- Series
- eGaN®
- FET Type
- N-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- +6V, -4V
- Technology
- GaNFET (Gallium Nitride)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 2mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 6A, 5V
- Power Dissipation (Max)
- -
- Supplier Device Package
- Die
- Gate Charge (Qg) (Max) @ Vgs
- 2.4nC @ 5V
- Drain to Source Voltage (Vdss)
- 80V
- Input Capacitance (Ciss) (Max) @ Vds
- 210pF @ 40V
- Current - Continuous Drain (Id) @ 25°C
- 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V