EPC2010C

Product Parameter

Series

eGaN®

FET Type

N-Channel

Packaging

Digi-Reel®

Vgs (Max)

+6V, -4V

Technology

GaNFET (Gallium Nitride)

FET Feature

-

Part Status

Active

Mounting Type

Surface Mount

Package / Case

Die

Vgs(th) (Max) @ Id

2.5V @ 3mA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

25mOhm @ 12A, 5V

Power Dissipation (Max)

-

Supplier Device Package

Die Outline (7-Solder Bar)

Gate Charge (Qg) (Max) @ Vgs

5.3nC @ 5V

Drain to Source Voltage (Vdss)

200V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 100V

Current - Continuous Drain (Id) @ 25°C

22A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V