Lanka Micro
EPC2016C
| Manufacturer: | EPC |
In Stock 317500 pcs
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|---|---|---|---|
| Datasheet: | EPC2016C | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | GANFET TRANS 100V 18A BUMPED DIE | $1.01 | |
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Product Parameter
- Series
- eGaN®
- FET Type
- N-Channel
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- +6V, -4V
- Technology
- GaNFET (Gallium Nitride)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 3mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 16mOhm @ 11A, 5V
- Power Dissipation (Max)
- -
- Supplier Device Package
- Die
- Gate Charge (Qg) (Max) @ Vgs
- 4.5nC @ 5V
- Drain to Source Voltage (Vdss)
- 100V
- Input Capacitance (Ciss) (Max) @ Vds
- 420pF @ 50V
- Current - Continuous Drain (Id) @ 25°C
- 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V