EPC2015C

Product Parameter

Series

eGaN®

FET Type

N-Channel

Packaging

Digi-Reel®

Vgs (Max)

+6V, -4V

Technology

GaNFET (Gallium Nitride)

FET Feature

-

Part Status

Active

Mounting Type

Surface Mount

Package / Case

Die

Vgs(th) (Max) @ Id

2.5V @ 9mA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

4mOhm @ 33A, 5V

Power Dissipation (Max)

-

Supplier Device Package

Die

Gate Charge (Qg) (Max) @ Vgs

8.7nC @ 5V

Drain to Source Voltage (Vdss)

40V

Input Capacitance (Ciss) (Max) @ Vds

1180pF @ 20V

Current - Continuous Drain (Id) @ 25°C

53A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V