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SI5908DC-T1-GE3
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SI5908DC-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 2975 pcs

Datasheet: SI5908DC-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: MOSFET 2N-CH 20V 4.4A 1206-8 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
2 N-Channel (Dual)
Packaging
Digi-Reel®
FET Feature
Logic Level Gate
Part Status
Active
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Base Part Number
SI5908
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
40mOhm @ 4.4A, 4.5V
Supplier Device Package
1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs
7.5nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
Current - Continuous Drain (Id) @ 25°C
4.4A