Lanka Micro
SI2365EDS-T1-GE3
| Manufacturer: | Vishay / Siliconix |
In Stock 33000 pcs
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| Datasheet: | SI2365EDS-T1-GE3 | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET P-CH 20V 5.9A TO-236 | $0.09 | |
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Product Parameter
- Series
- TrenchFET®
- FET Type
- P-Channel
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±8V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 32mOhm @ 4A, 4.5V
- Power Dissipation (Max)
- 1W (Ta), 1.7W (Tc)
- Supplier Device Package
- TO-236
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 8V
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 5.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V