TPH3208PD
Manufacturer: | Transphorm |
In Stock 119 pcs
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Datasheet: | TPH3208PD | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | GANFET N-CH 650V 20A TO220 | $10.8 |
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Product Parameter
- Series
- -
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±18V
- Technology
- GaNFET (Gallium Nitride)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 2.6V @ 300µA
- Operating Temperature
- -55°C ~ 150°C
- Rds On (Max) @ Id, Vgs
- 130mOhm @ 13A, 8V
- Power Dissipation (Max)
- 96W (Tc)
- Supplier Device Package
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 8V
- Drain to Source Voltage (Vdss)
- 650V
- Input Capacitance (Ciss) (Max) @ Vds
- 760pF @ 400V
- Current - Continuous Drain (Id) @ 25°C
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V