Lanka Micro
RN1130MFV,L3F
| Manufacturer: | Toshiba Semiconductor and Storage |
In Stock 0 pcs
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| Datasheet: | RN1130MFV,L3F | ||
| Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased | Reference Price (In US Dollars) | 1pcs |
| Description: | TRANS PREBIAS NPN 0.15W VESM | $0.03 | |
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Product Parameter
- Series
- -
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Power - Max
- 150mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Transistor Type
- NPN - Pre-Biased
- Resistor - Base (R1)
- 100 kOhms
- Frequency - Transition
- 250MHz
- Supplier Device Package
- VESM
- Resistor - Emitter Base (R2)
- 100 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 5mA
- Current - Collector (Ic) (Max)
- 100mA
- Current - Collector Cutoff (Max)
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 10mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 50V