Menu Navigation

2SC2229-O(TE6,F,M)
Images are for reference only. See Product Specifications for product details
thumb-0

2SC2229-O(TE6,F,M)

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: 2SC2229-O(TE6,F,M)
Product Category: Transistors - Bipolar (BJT) - Single Reference Price (In US Dollars) 1pcs
Description: TRANS NPN 50MA 150V TO226-3 Inquiry
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
-
Packaging
Bulk
Part Status
Obsolete
Power - Max
800mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
120MHz
Supplier Device Package
TO-92MOD
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Current - Collector (Ic) (Max)
50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
150V