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2SB1481(TOJS,Q,M)
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2SB1481(TOJS,Q,M)

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: 2SB1481(TOJS,Q,M)
Product Category: Transistors - Bipolar (BJT) - Single Reference Price (In US Dollars) 1pcs
Description: TRANS PNP 4A 100V TO220-3 Inquiry
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Product Parameter

Series
-
Packaging
Bulk
Part Status
Obsolete
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Type
PNP
Operating Temperature
150°C (TJ)
Frequency - Transition
-
Supplier Device Package
TO-220NIS
Vce Saturation (Max) @ Ib, Ic
1.5V @ 6mA, 3A
Current - Collector (Ic) (Max)
4A
Current - Collector Cutoff (Max)
2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 3A, 2V
Voltage - Collector Emitter Breakdown (Max)
100V