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2SA965-Y(F,M)
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2SA965-Y(F,M)

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: 2SA965-Y(F,M)
Product Category: Transistors - Bipolar (BJT) - Single Reference Price (In US Dollars) 1pcs
Description: TRANS PNP 800MA 120V TO226-3 Inquiry
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Product Parameter

Series
-
Packaging
Bulk
Part Status
Obsolete
Power - Max
900mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Transistor Type
PNP
Operating Temperature
150°C (TJ)
Frequency - Transition
120MHz
Supplier Device Package
LSTM
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector (Ic) (Max)
800mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 100mA, 5V
Voltage - Collector Emitter Breakdown (Max)
120V