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2SA949-Y,F(J
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2SA949-Y,F(J

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: 2SA949-Y,F(J
Product Category: Transistors - Bipolar (BJT) - Single Reference Price (In US Dollars) 1pcs
Description: TRANS PNP 50MA 150V TO226-3 Inquiry
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Product Parameter

Series
-
Packaging
Bulk
Part Status
Obsolete
Power - Max
800mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Transistor Type
PNP
Operating Temperature
150°C (TJ)
Frequency - Transition
120MHz
Supplier Device Package
TO-92MOD
Vce Saturation (Max) @ Ib, Ic
800mV @ 1mA, 10A
Current - Collector (Ic) (Max)
50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
150V