2SA1930(Q,M)
Manufacturer: | Toshiba Semiconductor and Storage |
In Stock 0 pcs
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Datasheet: | 2SA1930(Q,M) | ||
Product Category: | Transistors - Bipolar (BJT) - Single | Reference Price (In US Dollars) | 1pcs |
Description: | TRANS PNP 180V 2A TO220NIS | Inquiry |
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Product Parameter
- Series
- -
- Packaging
- Bulk
- Part Status
- Obsolete
- Power - Max
- 2W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Transistor Type
- PNP
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 200MHz
- Supplier Device Package
- TO-220NIS
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 100mA, 1A
- Current - Collector (Ic) (Max)
- 2A
- Current - Collector Cutoff (Max)
- 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 100mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 180V