BSM180D12P3C007
Manufacturer: | ROHM Semiconductor |
In Stock 26 pcs
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Datasheet: | BSM180D12P3C007 | ||
Product Category: | Transistors - FETs, MOSFETs - Arrays | Reference Price (In US Dollars) | 1pcs |
Description: | SIC POWER MODULE | $525.71 |
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Product Parameter
- Series
- -
- FET Type
- 2 N-Channel (Dual)
- Packaging
- Bulk
- FET Feature
- Silicon Carbide (SiC)
- Part Status
- Active
- Power - Max
- 880W
- Mounting Type
- Surface Mount
- Package / Case
- Module
- Vgs(th) (Max) @ Id
- 5.6V @ 50mA
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Supplier Device Package
- Module
- Gate Charge (Qg) (Max) @ Vgs
- -
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Input Capacitance (Ciss) (Max) @ Vds
- 900pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 180A (Tc)