Menu Navigation

MMUN2212LT1G
Images are for reference only. See Product Specifications for product details
thumb-0

MMUN2212LT1G

Manufacturer: ON Semiconductor In Stock 30291 pcs

Datasheet: MMUN2212LT1G
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS PREBIAS NPN 246MW SOT23-3 Inquiry
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
-
Packaging
Digi-Reel®
Part Status
Active
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Base Part Number
MMUN22**L
Resistor - Base (R1)
22 kOhms
Supplier Device Package
SOT-23-3 (TO-236)
Resistor - Emitter Base (R2)
22 kOhms
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)
50V