KSB811YTA

Product Parameter

Series

-

Packaging

Tape & Box (TB)

Part Status

Obsolete

Power - Max

350mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Transistor Type

PNP

Base Part Number

KSB811

Operating Temperature

150°C (TJ)

Frequency - Transition

110MHz

Supplier Device Package

TO-92S

Vce Saturation (Max) @ Ib, Ic

500mV @ 100mA, 1A

Current - Collector (Ic) (Max)

1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 100mA, 1V

Voltage - Collector Emitter Breakdown (Max)

25V