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2N5551RL1G
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2N5551RL1G

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: 2N5551RL1G
Product Category: Transistors - Bipolar (BJT) - Single Reference Price (In US Dollars) 1pcs
Description: TRANS NPN 160V 0.6A TO-92 Inquiry
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Product Parameter

Series
-
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Type
NPN
Base Part Number
2N5551
Operating Temperature
-55°C ~ 150°C (TJ)
Frequency - Transition
300MHz
Supplier Device Package
TO-92-3
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector (Ic) (Max)
600mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
160V