

IPP072N10N3GXKSA1
Manufacturer: | Infineon Technologies | In Stock 92 pcs | |
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Datasheet: | IPP072N10N3GXKSA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 100V 80A TO220-3 | $1.77 |
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Product Parameter
- Series
- OptiMOS™
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 3.5V @ 90µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.2mOhm @ 80A, 10V
- Power Dissipation (Max)
- 150W (Tc)
- Supplier Device Package
- PG-TO220-3
- Gate Charge (Qg) (Max) @ Vgs
- 68nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Input Capacitance (Ciss) (Max) @ Vds
- 4910pF @ 50V
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V