

IPD30N06S2L23ATMA3
Manufacturer: | Infineon Technologies | In Stock 2828 pcs | |
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Datasheet: | IPD30N06S2L23ATMA3 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 55V 30A TO252-3 | Inquiry |
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Product Parameter
- Series
- OptiMOS™
- FET Type
- N-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2V @ 50µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 23mOhm @ 22A, 10V
- Power Dissipation (Max)
- 100W (Tc)
- Supplier Device Package
- PG-TO252-3-11
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 10V
- Drain to Source Voltage (Vdss)
- 55V
- Input Capacitance (Ciss) (Max) @ Vds
- 1091pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V