BSZ086P03NS3EGATMA1
Manufacturer: | Infineon Technologies |
In Stock 14963 pcs
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Datasheet: | BSZ086P03NS3EGATMA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET P-CH 30V 40A TSDSON-8 | $0.87 |
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Product Parameter
- Series
- OptiMOS™
- FET Type
- P-Channel
- Packaging
- Cut Tape (CT)
- Vgs (Max)
- ±25V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 3.1V @ 105µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.6mOhm @ 20A, 10V
- Power Dissipation (Max)
- 2.1W (Ta), 69W (Tc)
- Supplier Device Package
- PG-TSDSON-8
- Gate Charge (Qg) (Max) @ Vgs
- 57.5nC @ 10V
- Drain to Source Voltage (Vdss)
- 30V
- Input Capacitance (Ciss) (Max) @ Vds
- 4785pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 13.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V